1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

In this letter, vertical GaN transistors fabricated on bulk GaN substrates are discussed. A threshold voltage of 0.5 V and saturation current >2.3 A are demonstrated. The measured devices show breakdown voltages of 1.5 kV and specific ON-resistance of 2.2 mΩ-cm 2 , which translates to a figure-of-merit of V BR 2 /R ON ~1 × 10 9 V 2 Ω -1 · cm -2 .pan id="2016913466" type="field">