X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots

Multilayer InAs-GaAs structures with an array of vertically aligned InAs quantum dots in a GaAs matrix, grown by molecular-beam epitaxy, were investigated by crystal truncation rods and high-resolution x-ray diffractometry methods. It was shown that the formation of scattering objects such as vertically aligned quantum dots in the structures strongly influences the mechanism of diffraction scattering of x-rays and changes the spatial distribution of the diffracted radiation. This is explained by the appearance of additional long-range order in the lateral arrangement of the scattering objects in the periodic structures, by the curving of the crystallographic planes in the periodic part of the structure, and by the quasiperiodicity of the deformation profile due to the vertically coupled quantum dots. The observed spatial distribution of the diffracted intensity can be explained qualitatively on the basis of a new model where the scattering layers with quantum dots consist of defect-free, coherently coupled, InAs and GaAs clusters.