Tunneling time of electrons in modulation n- doped GaAlAsGaAsAlAs quantum wells

Abstract Time resolved luminescence experiments performed on modulation n-doped GaAs Quantum Wells show a non-radiative process associated with the GaAsAlAs interface. Transfer of charge from GaAs (Γ point) to the AlAs (X point) is proposed as a mechanism to shorten the lifetime of the luminescence process. This process is consistent with magneto-optical experiments and selfconsistent calculations.