A High-Efficiency 28/39 GHz Dual-Band Power Amplifier MMIC for 5G Communication

A high-efficiency 28/39 GHz concurrent dual-band power amplifier (PA) is proposed using the 90 nm GaAs pseudomorphic high-electron mobility transistor (pHEMT) process for the millimeter-wave band fifth generation (5G) communication application in this letter. Its high efficiency is achieved by adopting a low-loss dual-band output matching network (OMN) and employing a large power push ratio (3:1) for the driver stage and the output stage under the same bias voltage. The dual-band PA has the measured gain of 19.1 dB and 20.3 dB, as well as the power added efficiency (PAE) of 51.3% with the 23.8-dBm output power and 49.5% with the 23.7-dBm output power at the 3 dB compression point (P-3 dB), at 29.6 GHz and 39 GHz, respectively. The area of the proposed dual-band PA is 1.45 mm×1.2 mm including pads.