Metal-semiconductor junction, semiconductor device, integrated circuit and methods

Ohmic contact to a semiconductor body formed by a doped semiconductor layer (1) and on the semiconductor layer (1) applied metallization (3) is formed, in which for the doping of the semiconductor layer (1) a dopant is provided far with a concentration above its solubility in the semiconductor layer (1) is introduced, and wherein the electrically active impurity concentration in the semiconductor layer (1) is a fraction of the introduced dopant concentration, characterized in that selenium is provided as the dopant for an n-doped semiconductor layer.