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Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires
Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires
2018
Suzanne Lancaster
A. M. Andrews
Michael Stoeger‐Pollach
Andreas Steiger‐Thirsfeld
H. Groiss
Werner Schrenk
G. Strasser
Hermann Detz
Keywords:
Boron
Physics
Nuclear magnetic resonance
Nanowire
Molecular physics
Molecular beam epitaxy
boron doping
Condensed matter physics
Correction
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