Method for driving a semiconductor memory device

In the driving method of the present invention, V1> Vs, V1> Vd, V2> Vs, and V2> voltage V1, V2, Vs satisfies the relationship Vd, and Vd, the first gate electrode, respectively (12), a second gate electrodes (17), by applying to the source electrode (15s), and a drain electrode (15d), the step 1 to write the first resistance value to the semiconductor memory device, V1> Vs, V1> Vd, V2 satisfying a relation V2 semiconductor memory device, and V1 satisfying the relationship of Vd by applying comprises the step 3 to write the third resistance in the semiconductor memory device.