열처리가 CuInSe2 박막의 광전 특성에 미치는 영향

CuInSe2 thin films were prepared by R·F magnetron sputtering process from the powder target which was previously compacted by powder of Cu2Se and In2Se3. The as-deposited thin films were annealed between 200 and 500℃ for 1 hour in a quartz tube in Ar f