Effect of Gd2O3 concentration in Bi-containing high-temperature solutions on the luminescence of epitaxial Gd3Ga5O12 films

Single-crystal gadolinium gallium garnet films have been grown by liquid-phase epitaxy on (111) Gd3Ga5O12 substrates from supercooled Bi2O3-B2O3 fluxed melts at different Gd2O3 concentrations. The luminescence spectra of the films have been measured at 10 and 300 K under unmonochromatized synchrotron X-ray excitation and selective UV synchrotron excitation. The Bi3+ luminescence is discussed.