650-type semiconductor laser chip for high-frequency communication and preparation method thereof

A 650-type semiconductor laser chip for high-frequency communication and a preparation method thereof are provided. The chip is 125-145 microns thick. The distance between an N electrode in a substrate layer and a P-face electrode in an active region is 125-145 microns. The orthographic projection area of the P-face electrode in the active region only covers the P-face electrode in the active region and a P-face electrode bonding pad region. In the chip preparation process, the structure design of the P-face electrode in the active region is optimized, the area of the P-face electrode in the active region is reduced to a P-face ridge region and the bonding pad region, the ridge region is inclined to one end of the chip, the bonding pad is placed in the middle of the chip, and therefore, the 650-type semiconductor laser chip has longer time of frequency response under the driving of pulse, and high-speed transmission of communication is realized. The frequency response time of the semiconductor laser chip is prolonged, and the requirement of pulse driving adopted in high-frequency communication is met. Therefore, the cheap 650-type semiconductor laser chip can be used in light sources for communication, silica fibers are replaced by plastic fibers, and the goal of high-speed transmission is achieved.