New Combination of SiGe RF Amplifier ICs with High-Q MEMS Components for Wireless Communication Radio Transceivers

This paper reports on the first third of research work in a EURIMUS labeled common project named “PowerSMART”. It benefits from the combination of modem SiGe-RF amplifier chips with the recently upcoming RF-MEMS high-Q inductors, capacitors and their combinations as well as switches, all comprised as “MEMS Passives”. Advanced packaging aspects are included as well.