Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature

Tensile-strained Ge/SiGe multiple quantum wells (MQWs) were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n+-Si (001) substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed.