1-Port Piezoelectric Resonators With >100 V/V Gain

2020 
This paper presents a 1-port thickness-shear (TS) mode quartz resonator with very high voltage gain, suitable for use in “near-zero-power” radios. These devices offer voltage gains >100x (referenced to $50~\Omega $ ) at ~50 MHz and >300x at ~75 MHz with ~60 fF load, which is the highest voltage gain directly measured to date in a piezoelectric micromechanical resonator. Six resonators with resonance ${f}_{{\text {r}}}\approx 50$ MHz and identical electrode dimensions are characterized by S11 measurements and by directly measuring the voltage gain using a high-impedance active probe. Quality factor ( ${Q}$ ) up to 140,000 at ~50 MHz and electromechanical coupling ( ${k}_{{\text {eff}}}^{2}$ ) up to 0.445% are demonstrated. In several devices, voltage gain around or above 100 V/V is observed for load ${C}~\approx ~60$ fF, and the gain changes as expected with decreasing load impedance. Additionally, a similar 1-port quartz resonator design at ${f}_{{\text {s}}}~\approx ~75$ MHz is demonstrated to have voltage gain over 300 V/V (referenced to $50\Omega $ ) and ${Q}$ around 335,000. These quartz resonators are fabricated in a mature, commercially available process, promoting widespread integration into radio-frequency (RF) wake-up receivers (WURs). [2020-0196]
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    12
    References
    1
    Citations
    NaN
    KQI
    []