Effect of Si-SiO2 Interface Traps and Bulk Traps on the Flicker Noise in PD-SOI MOSFETs

In this paper the effect of Si-SiO2 interface traps and bulk traps on the flicker noise in partially depleted silicon- on-insulator (PD SOI) MOSFET is reported for the first time. In order to observe the effect of traps we have taken the correlated mobility fluctuation model into consideration. The correlated mobility fluctuation model takes into consideration both the number as well as mobility fluctuations into accounts. We have indirectly explained the effect of trap densities on the flicker noise characteristics by observing the change in the drain current and front channel electron mobility. The results clearly demonstrate that the flicker noise in PD SOI MOSFETs is dependent on the trap density at the Si-SiO2 interface and bulk silicon film.