Surface-emitting semiconductor laser device with a vertical emission direction

It is indicated with a vertical emission direction, a surface-emitting semiconductor laser device comprising a semiconductor body having a first resonator mirror (2), a second resonator mirror (4) and suitable for generating radiation active zone (3). The first resonator mirror (2) alternately comprises first stacked layers (2a) of a first composition and second layers (2b) of a second composition. The first layers (2a) have oxidized areas on (8a). Further, at least the first layers contain (2a) each have a dopant, wherein at least one layer (21a) has a dopant concentration of the other of the first layers (2a) of the first layers (2a) having different dopant concentration.