Multi-value storage unit based on co-conductive threads and polarization control

The present invention relates to a multi-value storage unit based on co-conductive threads and polarization control, multi-value storage unit based on the co-polarization and the conductive wire is controlled from bottom to top of a bottom electrode, a ferroelectric layer function, a semiconductor a functional layer and the top electrode; the multi-value storage unit to migrate through the top electrode metal atoms in the semiconductor functional layer, and the polarization inversion and the change in the concentration of oxygen vacancies in the ferroelectric layer to achieve functional characteristic of multi-value storage, the non-characteristic can be realized high density destructive read and stored, in addition to a simple operation, low operating voltage, and is compatible with Si technology, to achieve a low voltage writing and reading, to overcome the conventional ferroelectric tunnel junction read using a probe writing multivalued storage, use of expensive substrates, expensive electrode material and is not compatible with Si technology limitations, and to achieve a multi-value storage, conducive to industrialization.