Influence of residual gas composition and background pressure in a multi-stage co-evaporation chamber on the quality of Cu(In, Ga)Se 2 thin films and their device performance

Thin film solar cells with Cu(In, Ga)Se 2 (CIGSe) absorbers prepared by co-evaporation reach efficiencies above 21% [1]. Typical multi-stage co-evaporation chambers are MBE-like (ultra-)high vacuum systems with individual effusion sources for each element. Cleanliness of the process chamber and the background pressure during the co-evaporation process could be of importance for the chamber design and a fair comparison of production costs when comparing different PV/Chalcopyrite technologies. Here we study the influence of the background pressure quality on the electronic and structural properties of the deposited absorber layer. To achieve this, we analyzed the residual gas composition before and the background pressure during consecutive co-evaporation processes and investigate the effect of a combined cleaning (mechanical and electro-chemical) of the chamber walls together with a simple conditioning of the chamber after opening the chamber and re-filling the crucibles. Cleaning of the chamber yielded a significant reduction in carbon species and an overall lower base pressure. The background pressure during the process was reduced from ∼6×10 −6 mbar (before cleaning with water cooling shroud) to 1∗10 −7 mbar (after cleaning with LN 2 filled cooling shroud). The type and amounts of contaminants in the absorber layer are characterized by laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS). The impact of the process pressure on the growth of the CIGSe layer is analyzed with respect to preferential orientation (using XRD), grain-size (using SEM), in-depth elemental gradients (using GDOES) and the electronic quality (using TRPL, C-V). Analysis of completed solar cell devices shows that the absorber band-gap is hardly affected by the chamber conditions, whereas we see an improved collection of charge carriers generated by photons in the infra-red spectral range from the conditioned chamber, also resulting in slightly higher j sc . The major effect is an increase in median V oc values from 585mV (before cleaning and conditioning) to 635mV (after cleaning and condition). The overall solar cell efficiency is increased by 18% (relative).