RF ASSISTED GLOW DISCHARGE CONDITIONING OF THE EXTRAP T2 DEVICE

The EXTRAP-T2 chamber will be conditioned with rf-assisted glow discharge and moderate baking at 100°C. A restricted accessibility and small diameter of port holes made it impossible to use common anode configurations. The anode and power supply applied and the GDC plasma parameters; current, voltage, rf-power and pressures will be presented.