Heterostructure barrier quantum well varactor

In this paper, we report on recent developments in multiplier technology using heterostructure barrier varactors. From the epitaxial point of view, the originality stems from a new device configuration based on a quantum-well/barrier scheme. Test samples were fabricated either in GaAs or in InP technology and exhibit significant improvements in terms of capacitance ratio (in excess of 10:1) and capacitance nonlinearity. On the other hand, we discuss other competing technologies notably planar-doped heterostructure barrier varactors.