A 7T1C Nonvolatile SRAM Based on Ferroelectric HfO2 Capacitor for Ultralow Power Applications

Power consumption is an essential issue in nano CMOS integrated circuits. The power-off operational mode and low-voltage circuits have proposed to reduce energy dissipation. Due to the compatibility of Hf02 ferroelectric capacitors (FeCAP) with CMOS process, FeCAP have been restudied as nonvolatile memory. In this paper, we proposed novel full logic compatible 7T1C nonvolatile static random-access memory (nvSRAM) based on FeCAP. The proposed memory cell consists of a traditional 6T SRAM core and a FeCAP circuit (1TIC) nonvolatile memory cell, making a 7T1C a scheme. The proposed novel 7T1C nvSRAM cell offers better performance when compared with the exiting nonvolatile nvSRAM cell. The direct current (DC) path is eliminated, and the static power consumption of SRAM is reduced. The power consumption of store, and restore is reduced and the speed is increased. Restore mode operation destructively reads data and does not need to write the data back to SRAM.