Two‐photon absorption induced anti‐Stokes emission in single InGaN/GAN quantum‐dot‐like objects

We observed crossed transitions and anti-Stokes emissions in single quantum-dot-like objects embedded in the active layer of InGaN/GaN quantum disks by two-photon absorption techniques. We proposed a phenomenological model based on the interplay between Auger effect and crossed transitions to explain the origin of anti-Stokes emissions and the preferential excitation of 0D objects at the expense of their surroundings. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)