Formation of Fabry-Perot cavity in one-dimensional and two-dimensional GaAs nanostructures
2014
We report formation of an optical cavity and observation of Fabry-Perot resonance in GaAs nanowires and nanosheets
grown by metal organic chemical vapor deposition (MOCVD) with selective area growth (SAG). These nanostructures
are grown along the (111)B direction. The formation of an optical cavity in the nanowires and nanosheets are
fundamentally different from each other. In nanowires the optical cavity is formed along the length of the nanowire with
ends of the nanowire behaving as two parallel mirrors. In nanosheets, however, the three non-parallel edges of the GaAs
nanosheets are involved in trapping of the light through total internal reflection, thus forming a 2D cavity. We show that
through surface passivation and local field enhancement, both the photoluminescence intensity and hence Fabry-Perot
peak intensity increases significantly. Transferring the GaAs nanowires and nanosheets to the gold substrate (instead of
Si/SiO2 substrate) leads to substantial enhancement in the photoluminescence intensity by 5X (for nanowires) and 3.7X
(for nanosheets) to infinite enhancement of the FP peaks intensities. In order to reduce the non-radiative recombination
in these nanowires the surface states in the nanowires can be passivated by either an ionic liquid (EMIM-TFSI) or an
AlGaAs surface layer. Both passivations methods lead to an enhancement of the optical response by up to 12X.
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