The structure and electrical characteristics of Si/Ge heterojunctions: I: Imperfections in the Si-Ge heteroepitaxial system obtained by deposition of germanium from a molecular beam

Abstract The type and distribution of imperfections in germanium and Ge x Si 1− x layers deposited onto nn + -Si substrates were investigated using optical and electron microscopy and electron diffraction. The influence of deposition temperature and substrate treatment on the morphology of the growing films is discussed.