Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2

Devices based on few-layer transition-metal dichalcogenides are rapidly being developed for various quantum technologies, such as valleytronic qubits and quantum emitters. Gate-defined quantum dots provide an appealing platform for coherent control of individual valley pseudospins, but well-resolved, discrete energy levels are required. The authors report gate-defined quantum dots in monolayer and bilayer WSe${}_{2}$, small enough to allow observation of transport through discrete levels. These devices thus satisfy an essential requirement for the development of (opto)electronic qubits based on valley-pseudospin states.