Uniform Insulating Properties of Low-Temperature Curable Gate Dielectric for Organic Thin-Film Transistor Arrays on Plastic Substrate

Achieving a high-resolution display on a plastic substrate requires a low-temperature process to ensure dimensional stability during fabrication process, including the deposition of gate dielectrics. Evaluation platform to confirm the uniform insulating properties of organic dielectric material prior to actual application to organic thin-film transistor arrays were proposed. This test method enabled verification of the suitability of the low-temperature curable dielectric and chemical resistance during the fabrication process. A cross-linked poly(hydroxy imide) that can be cured at a low temperature of 130°C exhibited stable insulating properties in a large area that sudden breakdown was not observed in an electric field up to 4 MV/cm. Thiophene-thiazole-based copolymer semiconductor was used as an active layer and inkjet-printed. In all the processes, the temperature of the substrate was kept below 130 °C, and 4.8-inch electrophoretic display panels on a polyethylene naphthalate substrate with a resolution of 98 dpi was demonstrated.