A method of forming a titanium silicide region

A method that makes it possible to selectively remove the titanium-containing region with respect to the titanium silicide region. A In the method of the embodiment, titanium-containing region and titanium silicide regions on the silicon layer of the workpiece is formed. Then, in order to selectively etch the titanium-containing region with respect to the titanium silicide region, the workpiece comprising a titanium-containing regions and the titanium silicide region, the fluorine-containing gas is supplied. .FIELD 1