Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga0.62In0.38As superlattices

Abstract Optimization of the growth conditions of strained-layer superlattices for polarization-insensitive semiconductor optical amplifiers is reported. The quality of the structure is assessed by transmission electron microscopy studies. Polarized room temperature photoluminescence is shown to be a powerful tool to investigate the complex band structure of such structures. The comparison of experimental and simulated photoluminescence spectra reveals a very good agreement.