High saturation intensity InGaAs/InP waveguide photodetector

In this paper, the fabrication, frequency response, and saturation characteristics of a waveguide pin photodiode made from double heterostructure InGaAs/InP materials are presented. The detector is designed for operation at optical wavelengths ranging from 1.3 to 1.5 /spl mu/m. The materials are grown using a low pressure, organo-metallic vapor phase epitaxial reactor. Due to the use of a vent-run manifold and growth interruption at the heterointerface, high quality detector material is obtained. >