Old Web
English
Sign In
Acemap
>
Paper
>
Analysis of the breakdown phenomena in GaAs MESFETs
Analysis of the breakdown phenomena in GaAs MESFETs
1990
Ashworth
Lindorfer
Keywords:
Gallium arsenide
Optoelectronics
Impact ionization
Materials science
electric breakdown
Logic gate
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]