Device for annealing trench of vertical silicon carbide semiconductor device, method for manufacturing vertical silicon carbide semiconductor device, and vertical silicon carbide semiconductor device

A device for annealing a trench of a vertical silicon carbide semiconductor device has a chamber, a wafer placement stage, a silicon carbide coating member, and a high-frequency generator and a coil. Hydrogen gas can be injected into and discharged from the chamber, and the compartment can be evacuated. The wafer placement stage is disposed in the interior of the chamber. The silicon carbide coating member is disposed so as to cover the wafer placement stage from above and below. The high-frequency generator and the coil inductively heat the silicon carbide coating member. The silicon carbide coating member is inductively heated and etched in quasi-thermal equilibrium, in which the chamber is charged with hydrogen gas and evacuated, and a trench is annealed by silicon supplied from the silicon carbide coating member.