Graphene quantum Hall effect parallel resistance arrays

As first recognized in 2010, epitaxial graphene on SiC(0001) provides a platform for quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures and materials. Here we report graphene parallel QHR arrays, with metrologically precise quantization near $1000\phantom{\rule{4pt}{0ex}}\mathrm{\ensuremath{\Omega}}$. These arrays have tunable carrier densities, due to uniform epitaxial growth and chemical functionalization, allowing quantization at the robust $\ensuremath{\nu}=2$ filling factor in array devices at relative precision better than ${10}^{\ensuremath{-}8}$. Broad tunability of the carrier density also enables investigation of the $\ensuremath{\nu}=6$ plateau. Optimized networks of QHR devices described in this work suppress Ohmic contact resistance error using branched contacts and avoid crossover leakage with interconnections that are superconducting for quantizing magnetic fields up to 13.5 T. Our work enables more direct scaling of resistance for quantized values in arrays of arbitrary network geometry.