Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

InAs/GaAs superlattices with ultra‐thin InAs (few monolayer) were grown on GaAs substrates. Nucleation of InAs occurs in a two‐dimensional or a three‐dimensional way depending on the growth conditions. The physical properties: x ray, transmission electron microscopy, and photoluminescence were used to characterize the different growth processes.