A high current ion implanter with hybrid scanning

Abstract An ion implanter delivering currents above 1 mA at 200 keV is described. Wafers are supported by a carousel; the beam is electrostatically scanned in a direction perpendicular to the wafers' displacement. We show how electrostatic scanning can be used even for high perveance beams. The advantage of fast (electrostatic) scanning on both dose uniformity and wafer temperature is demonstrated. As an example, it has been possible to implant 10 16 at.cm −2 over 6000 cm 2 during 90 min at an energy near 200 keV without exceeding 120°C on the wafer surface. Representative measured inhomogeneities range in the order of α = 0.5% for 3″ wafers at doses of 10 13 −10 16 cm −2 .