STI Mechanical-stress induced subthreshold kink effect of 40nm PD SOI NMOS device

For nanometer-regime PD SOI CMOS devices, the S/D region may be very small-the influence of the STI-induced mechanical stress cannot be neglected. In this paper, the influence of STI-induced mechanical stress in the subthrehsold kink behavior of a 40nm PD SOI NMOS device is reported.