Performance characterization of top-illuminate high-speed mesa-type InAlAs/InGaAs APD based on various dimensions of mesa active area

DC and AC performance of InAlAs/InGaAs avalanche photodiodes in term of dark-current, capacitance, multiplication-gain and 3-dB frequency (f 3-dB ) were demonstrated. The f 3-dB of 10-18 GHz was achieved using various dimensions of mesa active area.