Active-Matrix GaN Micro Light-Emitting Diode Display With Unprecedented Brightness

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of $10^{6}$ cd/ $\text{m}^{2}$ .