GaInP/GaInAsN/GaAs N-p-N Bipolar Transistors: Influence of Base Layer Composition and Alloy Grading on Device Performance

Data presented herein demonstrate that the DC current gain of GaInP/GaInAsN/GaAs DHBTs is almost independent of temperature over the range 225[ T[ 475 K and is relatively insensitive to current density for Jc / 1 A/cm 2 . Direct comparisons are made between DHBTs with different GaInAsN base alloy compositions and grading schemes and a high-performance GaInP/GaAs HBT.