Method for repairing plasma damage in metal interconnection layer process

The invention relates to a method for repairing plasma damage in a metal interconnection layer process. The method is applied to a semiconductor structure formed after a top passivating film deposition process in a preparation process of a rear metal interconnection layer. The method includes the steps: preparing a photo-resist layer with process patterns on the surface of the semiconductor structure by a photolithographic process; removing the photo-resist layer by mixed dry etching gas containing hydrogen and nitrogen after continuously etching the semiconductor structure by taking the photo-resist layer as a mask to repair the plasma damage in the semiconductor structure. The process effects of dry photo-resist removal and plasma damage repair can be simultaneously achieved only by one etching step. Compared with a traditional process, the method saves process steps.