Quantum Simulation을 이용한 Silicon Channel 두께와 Doping이 Double Gate MOSFET 소자의 GIDL 특성에 미치는 영향 분석

By using a quantum numerical simulation, the effects of channel thickness (Tsi) and channel doping (NA) on the Gate-Induced Drain Leakage (GIDL) current characteristics of underlap Double Gate MOSFET (DG-MOSFET) were investigated. The GIDL current in the lightly doped or undoped silicon channel is lower than that in heavily doped channel. Moreover, the thicker channel leads to lower GIDL current than that of thinner one due to the smaller potential difference between the surface channel and drain electrode.