Diode and manufacturing method

An embodiment of the invention discloses a diode and a manufacturing method thereof. The diode comprises a substrate, a second electrode region, a body lead-out region, a gate dielectric layer and a gate region, the substrate comprises a well region which is a first electrode region, the second electrode region and the body lead-out region are positioned in the surface of the well region, the body lead-out region is a lead-out region of the first electrode region, the first electrode region and the second electrode region are opposite in polarity, the gate dielectric layer is positioned on the surface of the well region, the gate region is positioned on the surface of the gate dielectric layer, and the gate dielectric layer is positioned between the second electrode region and the body lead-out region so as to isolate the second electrode region from the body lead-out region. The gate dielectric layer substitutes for a field oxide isolation region in the prior art and as well isolates multiple devices, and the total-dose radiation effect resistance capability of the diode is far higher than that of a diode in the traditional CMOS (complementary metal oxide semiconductor) process as the thickness of the gate dielectric layer is far smaller than the thickness of a peripheral field oxide isolation region of the diode in the traditional CMOS process.