Particle irradiation apparatus, and Strahlmodifikatorvorrichtung method of manufacturing a semiconductor device having a junction final extension zone

Strahlmodifikatorvorrichtung (700), comprising: diffusing sections (720) in which vertically on an exposure surface (701) of the Strahlmodifikatorvorrichtung (700) impinging particles are diverted from a vertical direction, wherein the stray portions (720) depressions (721) which by means of projections (722) are separated ; shading portions (710) that do not have dimples (721) and in which a total permeability for the particles is lower than in the stray portions (720) and said shadowing and scattering portions (710, 720) extending parallel along a lateral direction to the exposure surface (701) alternate and an area ratio of shading portions (710) to the stray portions (720) along the lateral direction varies, wherein in the Strahlmodifikatorvorrichtung (700) a total transmittance for the particles varies along a lateral direction parallel to the exposure surface (701).