Old Web
English
Sign In
Acemap
>
Paper
>
I-V characteristics of MOS transistors with ferromagnetic gate film
I-V characteristics of MOS transistors with ferromagnetic gate film
2002
Kan Shimizu
Satoshi Mizukami
Naoki Wakiya
Katumi Matuyama
Kazuo Shinozaki
Nobuyasu Mizutani
Keywords:
Hall effect
Ferrite (magnet)
Magnetic field
Transistor
Ferromagnetism
Electronic engineering
Pulsed laser deposition
Materials science
Optoelectronics
Electrical engineering
electric properties
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]