Optical and thermal properties of doped semiconductor

The knowledge of doping effects on optical and thermal properties of semiconductors is crucial for the development of optoelectronic compounds. The purpose of this work is to investigate theses effects by mirage effect technique and spectroscopic ellipsometry SE. The absorption spectra measured for differently doped Si and GaAs bulk samples, show that absorption in the near IR increases with dopant density and also the band gap shifts toward low energies. This behavior is due to free carrier absorption which could be obtained by subtracting phonon assisted absorption from the measured spectrum. This carrier absorption is related to the dopant density throw a semi-empirical model.