Old Web
English
Sign In
Acemap
>
Paper
>
Characterization of 0.25 um and 0.5 um AlGaN/GaN HEMT Devices forHigh Power Switching Applications
Characterization of 0.25 um and 0.5 um AlGaN/GaN HEMT Devices forHigh Power Switching Applications
2014
Marco Pirola
Camarchia
Roberto Quaglia
W Ciccognani
Ernesto Limiti
Natanael Ayllon
Keywords:
Electrical engineering
Electronic engineering
High-electron-mobility transistor
Materials science
Optoelectronics
power switching
algan gan
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]