Energy straggling and multiple scattering in silicon strip detectors

Abstract We present a test beam study of energy straggling and multiple scattering in silicon strip detectors using electrons and pions of momenta up to 50 GeV. Results are compared with GEANT simulation using a simple algorithm to parameterize energy loss distribution. The deflection due to multiple scattering in crystalline structure was investigated by placing a GaAs wafer at various angles.