Single-barrier type InGaAsSb infrared detector

Disclosed is a single-barrier type InGaAsSb infrared detector. The detector comprises a GaSb substrate, a lower contact layer which is manufactured on the GaSb substrate, a composite layer which is manufactured on the lower contact layer, and an upper contact layer which is manufactured on the composite layer. For overcoming the shortcomings of the existing strain InGaAs detector, the invention provides the single-barrier type InGaAsSb infrared detector with the advantages of low dark current and low noise.