Sturdy memristive switching characteristics of flexible 2D SnO prepared by liquid-to-solid exfoliation

Abstract Monolayer-thick two-dimensional (2D) tin monoxide (SnO) was synthesized by facile liquid-to-solid exfoliation. The SnO monolayer nanosheet displayed a 2D multidomain texture, where the nanoscale 2D SnO crystallites (~7 nm in average) were laterally dispersed in the form of the nano-network. Owing to the series-and-shunt filament networks formed along the lateral domain walls, the Ag/SnO/Ag lateral memristor exhibited the sturdy memristive switching characteristics (i.e., high on/off ratio ~ 103, data retention up to 1200 s, reliable endurance upon 100-times write/erase operations, and stable durability against the 50-times continuous bending stresses). These advocate that the liquid-to-solid exfoliated 2D SnO monolayer holds promise for future flexible nanoelectronics.