Current-Induced Light Emission from a Laterally Anodizing Porous Silicon Device

We report the current-induced light emission (CILE) at RT from a porous silicon (PS) Schottky device exhibiting good rectifying characteristics with the ideal factor of 14. The photoluminescence spectrum from the PS layer fabricated by laterally anodization peaks at 688 nm. The intensity of CILE increases with increasing current. It has run for more than two hours and still keeps stable. Possible mechanism of CILE is discussed.