Effects of trifluoromethyl substituents on interfacial and bulk polarization of polystyrene gate dielectrics

The ability to control the bulk and interfacial polarization of dielectric polymers is important to their application in organic electronics. We examine the effect of the trifluoromethyl substituent on poly(3-trifluoromethylstyrene) (P3TFMS) as compared to unsubstituted polystyrene (PS) on the I-V relationships of pentacene-based organic field-effect transistors (OFETs). Single- and double-layered films of these polymers were used, with lower layers crosslinked through vinylbenzocyclobutene comonomers before deposition of upper layers. Control experiments verified that the electronic effect of the crosslinking was negligible. We found that the TFM substituent markedly and independently affected both the initial threshold voltage Vth and the nonvolatile, shifted Vth observed after the application of static gate voltage, depending on its position adjacent or apart from the pentacene. The trifluoromethyl-bearing polymers exhibited significantly lower magnitude initial threshold voltages ( Vth,i of ca. −17 V ...