A study of isoelectronic defects in Si under uniaxial stress and magnetic fields

The photoluminescence spectra of isoelectronic bound excitons in quenched Inand T1-doped Si are studied under uniaxial stress and magnetic fields. A tunable infrared laser . system consisting of a dye laser-pumped optical parametric oscillator has been constructed, and used in conjunction with stress and Zeeman measurements to explain the excited state spectrum of the In-related photoluminescence emission. These excitons show several unusual features, including a configurational bistability, and a complete quenching of the hole orbital angular momentum for the case of one of the configurations. The binding centre symmetries and the detailed nature of the electronic states of the excitons are revealed by these data. A tentative model is proposed for the origin of the